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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3365 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS For high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage E SEM ANG H Open base Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 10 10 20 5 UNIT V V V A A A W ae ae Open collector Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;RBE= IE=10mA ;IC=0 IC=5A; IB=1A IC=5A ;IB=1A VCB=400V; IE=0 VCE=350V; RBE= IC=5A ; VCE=5V IC=10A ; VCE=5V 12 ,L=100mH MIN 400 10 2SC3365 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 50 50 |I |I V V A A Switching times resistive load ton ts tf Turn-on time Fall time CHA IN Storage time E SEM NG OND IC TOR UC 5 1.0 2.5 1.0 |I |I |I s s s IC=10A; IB1=-IB2=2A VCCO 150V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3365 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3365 CHA IN E SEM NG OND IC TOR UC 4 |
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